Two-Bits Per Cell Not-AND-Gate (NAND) Nitride Trap Memory

ABSTRACT

A non-volatile memory array includes a semiconductor substrate having a main surface, a first source/drain region and a second source/drain region. The second source/drain region is spaced apart from the first source/drain region. A well region is disposed in a portion of the semiconductor substrate between the first source/drain region and the second source/drain region. A plurality of memory cells are disposed on the main surface above the well region. Each memory cell includes a first oxide layer formed on the main surface of the substrate, a charge storage layer disposed above the first oxide layer relative to the main surface of the semiconductor substrate and a second oxide layer disposed above the charge storage layer relative to the main surface of the semiconductor substrate. A plurality of wordlines are disposed above the second oxide layer relative to the main surface of the semiconductor substrate.

REFERENCE TO RELATED APPLICATIONS

This is a divisional of application Ser. No. 11/234,498, filed Sep. 23,2005 incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a non-volatile memory semiconductordevice and a method for manufacturing a non-volatile memorysemiconductor device, and more particularly, to a non-volatile memorysemiconductor device having a two-bits per cell not-and-gate (NAND)nitride trap memory and a method for manufacturing a non-volatile memorysemiconductor device having a two-bits per cell NAND nitride trapmemory.

Non-volatile memory (“NVM”) refers to semiconductor memory which is ableto continually store information even when the supply of electricity isremoved from the device containing such an NVM memory cell. NVM includesMask Read-Only Memory (Mask ROM), Programmable Read-Only Memory (PROM),Erasable Programmable Read-Only Memory (EPROM) and Electrically ErasableProgrammable Read-Only Memory (EEPROM). Typically, NVM can be programmedwith data, read and/or erased, and the programmed data can be stored fora long period of time prior to being erased, even as long as ten years.

Nitride read only memory (NROM) is a type of EEPROM that usescharge-trapping for data storage. An NROM cell is typically composed ofa metal-oxide-silicon field effect transistor (MOSFET) having an ONO(oxide-nitride-oxide) layer disposed between the gate and thesource/drain of the semiconductor material. The nitride layer in the ONOlayer is able to “trap” charge (electrons) when the device is“programmed.” Charge localization is the ability of the nitride materialto store the charge without significant lateral movement of the chargethroughout the nitride layer. NROM utilizes a relatively thick tunneloxide layer, which typically negatively impacts the time it takes toerase a memory cell. NROM can be contrasted with conventional “floatinggate” memory cells wherein the floating gate is conductive and thecharge is spread laterally throughout the entire floating gate andcharge is transferred through a tunnel oxide layer. Programming (i.e.,charge injection) of the charge-trapping layer in NROM cells can becarried out by various hot carrier injection methods such as channel hotelectron injection (CHE), source side injection (SSI) or channelinitiated secondary electron (CHISEL) which all inject electrons intothe nitride layer. Erasing is performed by applying a positive gatevoltage, which permits hole tunneling through the ONO top dielectriclayer from the gate. Erasing (i.e., charge removal) in NROM devices istypically carried out by band-to-band hot hole tunneling (BTBHHT).However, BTBHHT erasing causes many reliability issues with NROM devicesand causes degradation of the NROM devices and charge loss after manyprogram/erase cycles. Reading is carried out in a forward or reversedirection. Localized charge-trapping technology allows two separate bitsper cell, thus resulting in a doubling of memory density. The NROM canbe repeatedly programmed, read, erased and/or reprogrammed by knownvoltage application techniques.

NROM has attracted attention because of the two bits per cell operationand simple process flow for fabrication. However, NROM memory encountersfundamental limitations as the design is scaled down because of shortchannel effect and source/drain punch-through. A typical NROM memory isdisclosed in U.S. Pat. No. 5,768,192 (Eitan '192), the contents of whichis incorporated by reference herein. The source/drain of NROM is formedby Arsenic implantation into a P-well. The doping is heavy and thesource/drain junction is deep in order to produce channel hot electroninjection for programming and band to band hot hole for erasing. Asresult, even with virtual ground array architecture, the cell size of aNROM memory cell is about 8F2-10F2, where F is the feature size. Theheavy and deep source/drain limits the scaling of the NROM cell.Further, the large hot electron programming current make it hard toparallel program on the order of kilobytes (kB) which limits theapplication for data flash.

Another common EEPROM is a metal-nitride-oxide-silicon (MNOS) memorycell. A typical MNOS cell includes a very thin layer of insulatingmaterial like silicon dioxide (SiO2) to separate a silicon nitridecharge storage region from a gate and from a well region of thesemiconductor device. MNOS devices are programmed by applying a positivevoltage potential to the gate electrode while forcing the source, drainand well regions to a lower voltage potential. By applying a highervoltage to the gate, an electric field is created causing electrons inthe well region and the rest of the semiconductor to tunnel through theoxide layer to the nitride layer. In order for the electrons to be ableto tunnel through the oxide layer, the oxide layer must be relativelythin, e.g., 20-30 Angstroms (Å).

Yet another known EEPROM is a silicon-oxide-nitride-oxide-silicon(SONOS) memory cell. FIG. 1 depicts a typical conventional SONOS device110. The conventional SONOS device 110 includes a silicon substrate 111,a source 114, a drain 112, a well region 115 and a first oxide layer 120on top of the well region 115. A nitride charge storage layer 124 isprovided above the first oxide layer 120 and a second oxide layer 130 isprovided above the nitride charge storage layer 124. A polysilicon(poly) gate 125 is disposed on top of the ONO stack 120, 124, 130. Byproviding the second oxide layer 130 on top of the nitride layer 124there is an improvement in the ability to control where the charge isstored or “trapped” within the nitride layer 124 during programmingoperations. Additionally, the second oxide layer 124 prevents holes fromentering from the overlying gate 125. A non-volatile memory cell thatutilizes asymmetric charge trapping is disclosed in Eitan '192.

U.S. Pat. No. 6,011,725 (Eitan '725), the entire contents of which isincorporated by reference herein, provides a detailed comparison ofseveral of the prior art NVMs including respective programming, erasingand reading techniques. The Eitan '725 patent also discloses a type ofSONOS memory cell capable of storing two data bits by localized chargestorage techniques.

To program a first bit of typical conventional SONOS devices 110, aprogram voltage is applied to the drain 112 and to the gate 125 whilethe source 114 is grounded. The program voltage cause a vertical andlateral electric field along the length of the channel 105 from thesource 114 to the drain 112. The electric field causes electrons to bedrawn from the source 114 to the drain 112, and as the electrons movealong a length of the channel 105, the electrons gain energy to “jump”the potential barrier posed by the bottom oxide layer 120 into thenitride charge storage layer 124 where they are “trapped” or stored. Theaccelerated electrons that make the jump are referred to as hotelectrons. Since the nitride charge storage layer 124 is not reallyconductive, the electrons cannot spread throughout the nitride chargestorage layer 124, but instead remain trapped in a local region closestto the drain 112. Similarly, to program a second bit of typicalconventional SONOS devices 110, a program voltage is applied to thesource 114 and to the gate 125 while the drain 112 is grounded. Theprogram voltage cause a vertical and lateral electric field along thelength of the channel 105 from the drain 112 to the source 114. Theelectric field causes electrons to be drawn from the drain 112 to thesource 114, and as the electrons move along a length of the channel 105,the electrons gain energy to “jump” the potential barrier posed by thebottom oxide layer 120 into the nitride charge storage layer 124 wherethey are “trapped” or stored. Since the nitride charge storage layer 124is not really conductive, the electrons cannot spread throughout thenitride charge storage layer 124, but instead remain trapped in a localregion closest to the source 114. In order to be able to erase thememory, the programming duration must be limited because as theprogramming voltages continue to be applied, the width of the chargetrapping region becomes wider and therefore harder to erase.

NAND flash memory has become the main stream technology for data flashapplication due to its smaller cell size and faster program speed andserial access. However, floating gate type NAND flash memory encountersfundamental limitations as the design is scaled down below 70 nanometers(nm). Besides its poor endurance, the interference effect due toparasitic capacitance between the adjacent floating gates severelydeteriorates the cell threshold voltage distribution. Notably, SONOSNAND flash memory is free of such technological limitations generatingbelow the design rule of 70 nm. However, SONOS NAND flash memorygenerally has poor charge retention which prevents SONOS NAND flashmemory from being applied in high density NAND flash memory.

It is desirable to provide a non-volatile memory semiconductor devicehaving a two-bits per cell NAND nitride trap memory. It is alsodesirable to provide an NVM having data retention that is better thanSONOS NAND memory.

BRIEF SUMMARY OF THE INVENTION

Briefly stated, the present invention comprises a non-volatile memoryarray including a semiconductor substrate having a main surface, a firstsource/drain region in a portion of the semiconductor substrateproximate the main surface and a second source/drain region in a portionof the semiconductor substrate proximate the main surface. The secondsource/drain region is spaced apart from the first source/drain region.A well region is disposed in a portion of the semiconductor substrateproximate the main surface between the first source/drain region and thesecond source/drain region. A plurality of memory cells are disposed onthe main surface of the substrate above the well region and between thefirst source/drain region and the second source/drain region. Eachmemory cell includes a first oxide layer formed on the main surface ofthe substrate, a charge storage layer disposed above the blocking oxidelayer relative to the main surface of the semiconductor substrate andsecond oxide layer disposed above the charge storage layer relative tothe main surface of the semiconductor substrate. The first oxide layeris disposed on a portion of the main surface proximate the well region.A plurality of wordlines are disposed above the second oxide layerrelative to the main surface of the semiconductor substrate.

The present invention also comprises a method of programming anon-volatile memory cell in a memory array. The memory array includes asemiconductor substrate, a first source/drain region, a secondsource/drain region, a well region between the first source/drain regionand the second source/drain region, a plurality of memory cells disposedon the semiconductor substrate between the first source/drain and thesecond source/drain, a plurality of wordlines associated with respectiveones of the plurality of memory cells and a plurality of current controllines that are disposed on either side of each of the plurality ofwordlines. Each memory cell includes a first oxide layer above the wellregion, a charge storage layer above the first oxide layer and a secondoxide layer above the charge storage layer. The method includes applyinga positive wordline programming voltage to the wordline over therespective memory cell to be programmed, applying a reference voltage tothe well region and applying a current control line programming voltageto a current control line closest to the memory cell to be programmed onthe side nearest the second source/drain region. The method furtherincludes applying a source/drain programming voltage to the firstsource/drain region and coupling the second source/drain region to thereference voltage. The source/drain programming voltage is sufficient tocause electron tunneling from the second source/drain region through thewell region toward the charge storage region to program a first bit.

The present invention also comprises a method of forming a non-volatilememory array including providing a semiconductor substrate having a mainsurface, forming a first source/drain region in a portion of thesemiconductor substrate proximate the main surface and forming a secondsource/drain region in a portion of the semiconductor substrateproximate the main surface. The first source/drain region is spacedapart from the second source/drain region. A well region is defined in aportion of the semiconductor substrate proximate the main surfacebetween the first source/drain region and the second source/drainregion. A first oxide layer is deposited on the main surface of thesubstrate. The first oxide layer is disposed on a portion of the mainsurface proximate the well region. A charge storage layer is formedabove the first oxide layer relative to the main surface of thesemiconductor substrate. A second oxide layer is deposited above thecharge storage layer relative to the main surface of the semiconductorsubstrate. Portions of the first oxide layer, the charge storage layerand the second oxide layer are etched away in order to form a pluralityof individual memory cells disposed between the first and secondsource/drain regions. A plurality wordlines are formed that eachinterconnect a subset of the plurality of memory cells.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The foregoing summary, as well as the following detailed description ofa preferred embodiment of the invention, will be better understood whenread in conjunction with the appended drawings. For the purpose ofillustrating the invention, there are shown in the drawings embodimentswhich are presently preferred. It should be understood, however, thatthe invention is not limited to the precise arrangements andinstrumentalities shown. In the drawings:

FIG. 1 is a partial sectional side elevational view of a conventionalnon-volatile memory (NVM) cell having a charge storage layer betweenoxide layers;

FIG. 2 is a schematic diagram of a non-volatile memory (NVM) arrayhaving two-bits per cell NAND nitride trap memory in accordance with thepreferred embodiments of the present invention;

FIG. 3 is a flow diagram demonstrating a memory reading method inaccordance with the preferred embodiments of the present invention;

FIG. 4 is a flow diagram demonstrating a memory programming method inaccordance with the preferred embodiments of the present invention;

FIG. 5 is a flow diagram demonstrating a memory erasing method inaccordance with the preferred embodiments of the present invention;

FIG. 6 is a top plan view of the array of FIG. 2;

FIG. 7 is a partial sectional side elevational view of one local bitlineof the array of FIG. 6 taken along line 7-7;

FIG. 8 is a flow diagram demonstrating a programming method inaccordance with the preferred embodiments of the present invention;

FIG. 9 is a partial sectional side elevational view of the NVM of FIG. 2demonstrating programming of a first bit of a particular cell;

FIG. 10 is a partial sectional side elevational view of the NVM of FIG.2 demonstrating programming of a second bit of a particular cell;

FIG. 11 is a partial sectional side elevational view of the NVM of FIG.2 demonstrating reading of a first bit of a particular cell;

FIG. 12 is a partial sectional side elevational view of the NVM of FIG.2 demonstrating reading of a second bit of a particular cell; and

FIG. 13 is a partial sectional side elevational view of the NVM of FIG.2 demonstrating erasing both first and second bits of a particular cell.

DETAILED DESCRIPTION OF THE INVENTION

Certain terminology is used in the following description for convenienceonly and is not limiting. The words “right”, “left”, “lower”, and“upper” designate directions in the drawing to which reference is made.The words “inwardly” and “outwardly” refer direction toward and awayfrom, respectively, the geometric center of the object described anddesignated parts thereof. The terminology includes the words abovespecifically mentioned, derivatives thereof and words of similar import.Additionally, the word “a,” as used in the claims and in thecorresponding portions of the specification, means “at least one.”

One (1) micron or micrometer (μm) is 10,000 Angstroms (Å) or 1000nanometers (nm).

As used herein, reference to conductivity will be limited to theembodiment described. However, those skilled in the art know that p-typeconductivity can be switched with n-type conductivity and the devicewould still be functionally correct (i.e., a first or a secondconductivity type). Therefore, where used herein, the reference to n orp can also mean that either n and p or p and n can be substitutedtherefor.

Furthermore, n+ and p+ refer to heavily doped n and p regions,respectively; n++ and p++ refer to very heavily doped n and p regions,respectively; n− and p− refer to lightly doped n and p regions,respectively; and n−− and p−− refer to very lightly doped n and pregions, respectively. However, such relative doping terms should not beconstrued as limiting.

Referring to the drawings in detail, wherein like reference numeralsindicate like elements throughout, there is shown in FIGS. 2 and 7-13 anon-volatile memory (NVM) NAND nitride trap memory semiconductor array200 having two-bits Bit-A, Bit-B per memory cell 266 in accordance withthe preferred embodiment of the present invention.

In particular, FIG. 2 shows a schematic diagram of the NVM array 200.The NVM array 200 comprises NAND nitride trap memory cells 266. Each ofthe memory cells 266 is configured to store two-bits Bit-A, Bit-B. TheNVM array 200 includes a plurality of local bitlines LBL1, LBL2, LBL3,LBL4, a plurality of block select lines BSL1, BSL2, BSL3, BSL4, aplurality of wordlines WLA, WLB, WLC, a plurality of current controllines CCLA, CCLB, CCLC, CCLn and a plurality of metal bit lines MBL1,MBL2. Each of the wordlines WLA-WLC is separated from each of thecurrent control lines CCLA-CCLn by a dielectric spacer 245 (FIGS. 6-7).

Preferably, the wordlines WLA-WLC are formed of doped or undopedpolysilicon (poly) and are between about 500-1500 Å in thickness.Prefereably, the current control lines CCLA-CCLn are formed of doped orundoped polysilicon and are between about 500-1500 Å in thickness.

FIG. 6 is a top plan view of a portion of the NVM array 200. FIG. 7 is apartial sectional side elevational view of one local bitline of thearray of FIG. 6 taken along line 7-7. As best shown in FIG. 7, the NVMarray 200 includes a semiconductor substrate 202, a first source/drain214, a second source/drain 212, a well region 205. Preferably, thesemiconductor substrate 202 is undoped or doped silicon, but thesemiconductor substrate 202 can be other semiconductor materials withoutdeparting from the embodiments of the present invention. Each memorycell 266 includes a first oxide layer 220 on top of the well region 205,a nitride charge storage layer 224 disposed above the first oxide layer220 and a second oxide layer 230 disposed above the nitride chargestorage layer 224. A respective wordline WLA-WLC is disposed on top ofthe oxide-nitride-oxide (ONO) stack 220, 224, 230 of each memory cell266. The second oxide layer 230 electrically isolates the nitride chargestorage layer 224 form the respective overlying wordline WLA-WLC, andtherefore, prevents holes from entering from the overlying respectivewordline WLA-WLC. The metal bitlines MBL1, MBL2 are coupled to thesource/drain 212 and source/drain 214, respectively, through contacts251, 252, respectively. The general region within the nitride chargestorage layer 224 where the charge is stored for a first bit Bit-A and asecond bit Bit-B is shown shaded with element numbers Bit-A, Bit-B,respectively. It should be understood that the shape of the regionencompassed by the stored charge within the nitride storage layer 224may or may not be as geometrically precise as depicted. It should benoted in FIG. 7 that the first and last current control lines CCLnoverlap the first and second source/drain regions 214, 212 to ensurethat the first and second source/drain regions 214, 212 connects to theinversion local bitline LBL1-LBL4.

The block selecting lines BSL1-BSL4 are used to switch the bias of thefirst source/drain 214 and the second source drain 212. The currentcontrol lines CCLA-CCLn control the programming current and also assistin inducing inversion of the first and second source/drain 214, 212.

Preferably, a dielectric layer 245 is formed of silicon oxide (SiOx) andis between about 70-150 Å in thickness. Preferably, the first oxidelayer 220 is formed of silicon oxide (SiOx) and is between about 30-60 Åin thickness. For example, the first oxide layer 220 may be formed ofsilicon dioxide SiO2 and the like. Preferably, the nitride chargestorage layer 224 is formed of a nonconducting nitride material and isbetween about 40-80 Å in thickness. For example, the nitride chargestorage layer 224 may be formed of silicon nitride Si3N4 and the like.Of course, other generally nonconducting charge storage materials may beutilized for the charge storage layer 224. Preferably, the second oxidelayer 230 is formed of silicon oxide (SiOx) and is between about 40-90 Åin thickness. For example, the second oxide layer 230 may be formed ofsilicon dioxide SiO2 and the like.

It should be recognized that the two bit memory cells 266 in accordancewith the present invention are symmetrical. Therefore, the terms sourceand drain as used with conventional one bit devices may be confusing.During programming and reading operations, the source/drain 214 servesas the drain terminal and the source/drain 212 serves as the sourceterminal for the first bit Bit-A for each memory cell 266. Similarly,the source/drain 212 serves as the drain terminal and the source/drain214 serves as the source terminal for the second bit Bit-B for eachmemory cell 266. Thus, it should be understood that the source and drainterminals 212, 214 for the second bit Bit-B are reversed as compared tothe source and drain terminals 212, 214 for the first bit Bit-A.

In order to program the plurality of memory cells 266 for the firsttime, a negative Fowler-Nordheim (−FN) reset is needed to increase theVt of all of the memory cells 266. FIG. 8 shows the steps for performinga negative gate voltage FN injection reset.

Referring to FIGS. 4 and 9-10, the steps for programming both bitsBit-A, Bit-B of one memory cell 266 will be described. The programmingmethod is a LC source side injection (SSI) method.

To program the first bit Bit-A, a relatively high positive bias isapplied to wordline WLA and current control line CCLA is relativelyweakly turned on. For example, a programming voltage of about 8-12 voltsdirect current (DC) may be applied to wordline WLA and a voltage ofabout 0.7-2 VDC may be applied to current control line CCLA. The otherword lines WLB-WLC and current control lines CCLB-CCLn are fully turnedon. For example, the other word lines WLB-WLC may have about 10-15 VDCapplied thereto, and the current control lines CCLB-CCLn may have about6-9 VDC applied thereto. Block select line BSL2 and block select lineBSL3 are turned on. A drain programming voltage is applied to metal bitline MBL1 and therefore to the source/drain region 214. The drainprogramming voltage may be between about 4-6 VDC. A source programmingvoltage is applied to metal bit line MBL2, and therefore to the sourcedrain region 212. The p-well 205 is grounded (i.e., about zero VDC). Thesource programming voltage may be about ground or zero VDC. Thus, inthis configuration, the source/drain region 212 functions as the sourceand source/drain region 214 functions as the drain for programmingpurposes. FIG. 9 diagrammatically shows that a pass channel is formedbetween the source/drain region 212 and the memory cell 266 underwordline WLA. The region within the nitride charge storage area 224closest to the source/drain region 212 becomes the injection point wherehot electrons are trapped thereby defining a programmed first bit Bit-A.

Similarly, to program the second bit Bit-B, a relatively high positivebias is applied to wordline WLA and current control line CCLB isrelatively weakly turned on. For example, a programming voltage of about8-12 volts direct current (DC) may be applied to wordline WLA and avoltage of about 0.7-2 VDC may be applied to current control line CCLB.The other word lines WLB and WLC and current control lines CCLA,CCLC-CCLn are fully turned on. For example, the other word lines WLB andWLC may have about 10-15 VDC applied thereto, and the current controllines CCLA, CCLC-CCLn may have about 6-9 VDC applied thereto. Blockselect line BSL2 and block select line BSL3 are turned on. A drainprogramming voltage is applied to metal bit line MBL2, and therefore tothe source/drain region 212. The drain programming voltage may bebetween about 4-6 VDC. A source programming voltage is applied to metalbit line MBL1, and therefore to the source drain region 214. The p-well205 is grounded (i.e., about zero VDC). The source programming voltagemay be about ground or zero VDC. Thus, in this configuration, thesource/drain region 214 functions as the source and source/drain region212 functions as the drain for programming purposes. FIG. 10diagrammatically shows that a pass channel is formed between thesource/drain region 214 and the memory cell 266 under wordline WLA. Theregion within the nitride charge storage area 224 closest to thesource/drain region 214 becomes the injection point where hot electronsare trapped thereby defining a programmed second bit Bit-B.

Referring to FIGS. 3 and 11-12, the steps for reading both bits Bit-A,Bit-B of one memory cell 266 will be described.

To read the first bit Bit-A, a read bias voltage is applied to wordlineWLA that is between the program voltage and the erase voltage Vt. Forexample, the read bias voltage may be between about 1-5 VDC. The otherwordlines WLB-WLC and the current control lines CCLA-CCLN are all fullyturned on. For example, the other word lines WLB-WLC may have about10-15 VDC applied thereto, and the current control lines CCLA-CCLn mayhave about 6-9 VDC applied thereto. The block select lines BSL2-BSL3 areturned on. A source voltage is applied to metal bitline MBL2, andtherefore to the source/drain region 212. The source voltage may beabout ground or zero VDC. A drain voltage is applied to metal bit lineMBL1, and therefore to the source/drain region 214. The p-well 205 isgrounded (i.e., about zero VDC). An electrical current in the channel205 is then sensed. If the first bit Bit-A is programmed (i.e., logic0), the current in the channel 205 will be very low, but if the firstbit Bit-A is not programmed (i.e., logic 1), then the current in thechannel 205 will be higher. By connecting the source/drain region 212 toreference or ground and connecting the source/drain region 214 to apositive voltage, a drain induced barrier lowering (DIBL) effectovercomes the electronic field barrier which was built by the injectionof electrons if Bit-B was programmed.

Likewise, to read the second bit Bit-B, a read bias voltage is appliedto wordline WLA that is between a program voltage and an erase voltageVt. For example, the read bias voltage may be between about 1-5 VDC. Theother wordlines WLB-WLC and the current control lines CCLA-CCLN are allfully turned on. For example, the other word lines WLB-WLC may haveabout 10-15 VDC applied thereto, and the current control lines CCLA-CCLnmay have about 6-9 VDC applied thereto. The block select lines BSL2-BSL3are turned on. A source voltage is applied to metal bitline MBL1, andtherefore to the source/drain region 214. The source voltage may beabout ground or zero VDC. A drain voltage is applied to metal bit lineMBL2, and therefore to the source drain region 212. The p-well 205 isgrounded (i.e., about zero VDC). The electrical current in the channel205 is then sensed. If the second bit Bit-B is programmed (i.e., logic0), the current in the channel 205 will be very low, but if the secondbit Bit-B is not programmed (i.e., logic 1), then the current in thechannel 205 will be higher. By connecting the source/drain region 214 toreference or ground and connecting the source/drain region 212 to apositive voltage, a DIBL effect prevents the second bit effect fromoccurring.

Referring to FIGS. 5 and 13, the steps for erasing both bits Bit-A,Bit-B of one memory cell 266 will be described.

To erase both the first and second bits Bit-A, Bit-B of a memory cell266, a negative erase voltage is applied to all wordlines WLA-WLC andcurrent control lines CCLA-CCLn in a sector. The p-well 205 is eithergrounded or a positive erase voltage is applied thereto. For example, ifa voltage between about −10 to −15 VDC is applied to the wordlinesWLA-WLC, then a positive voltage of between about 5-10 VDC is applied tothe p-well 205. But, if a voltage between about −15 to −20 VDC isapplied to the wordlines WLA-WLC, then the p-well 205 is grounded. Thenet result is a negative differential between the p-well 205 to thewordlines of about −15 to −20 VDC. All of the block select linesBSL1-BSL4 are turned off.

The present invention also includes a method of forming a non-volatilememory array 200. Referring to FIG. 7, the method includes providing asemiconductor substrate 202 having a main surface 202 a. A firstsource/drain region 214 is formed in a portion of the semiconductorsubstrate 202 proximate the main surface 202 a. A second source/drainregion 212 is formed in a portion of the semiconductor substrate 202proximate the main surface 202 a. The first source/drain region 214being spaced apart from the second source/drain region 212. A wellregion 205 is defined in a portion of the semiconductor substrate 202proximate the main surface 202 a between the first source/drain region214 and the second source/drain region 212. A first oxide layer 220 isdeposited on the main surface 202 a of the substrate 202 proximate thewell region 205. A charge storage layer 224 is formed above the firstoxide layer 220 relative to the main surface 202 a of the semiconductorsubstrate 202. A second oxide layer 230 is deposited above the chargestorage layer 224 relative to the main surface 202 a of thesemiconductor substrate 202. Portions of the first oxide layer 220, thecharge storage layer 224 and the second oxide layer 230 are etched awayin order to form a plurality of individual memory cells 266 disposedbetween the first and second source/drain regions 214, 212. A mask (notshown) may be used to perform the etching. A plurality wordlines WLA-WLCare formed that each interconnect a subset of the plurality of memorycells 266. A plurality of current control lines CCLA-CCLn are formed oneach side of the plurality of wordlines WLA-WLC. An insulator 245 isdeposited around the plurality of wordlines WLA-WLC and the plurality ofcurrent control lines CCLA-CCLn.

The NVM array 200 may be an N-channel device by making, likely by dopingand/or implanting, the first and second source/drain regions 214, 212both n-type regions and by leaving the well region 205 a p-type regionin the semiconductor substrate 202. Alternatively, the NVM cell 200 maybe a P-channel device by making, likely by doping and/or implanting, thefirst and second source/drain regions 214, 212 both p-type regions andby leaving the well region an n-type region. Alternately, trenches (notshown clearly) may be formed in the semiconductor substrate 202 fordesired first and second source/drain regions 214, 212, and the trenchescan then be refilled with a an n-type or p-type material depending onthe material of the substrate 202 such as with a heavily doped n-type orp-type polysilicon and the like.

The various layers 220, 224, 230 and lines WLA-WLC, CCLA-CCLn,BSL1-BSL4, LBL1-LBL4 may be formed in any of a variety of ways known inthe art. For example, the various layers 220, 224, 230 may be grown ordeposited. Deposition may be by chemical vapor deposition (CVD),physical vapor deposition (PVD), evaporation, sputtering and the like.Patterns may be formed on the surface of the semiconductor substrate byphotolithography or photomasking (“masking”) techniques. The variouslayers 220, 224, 230 and lines WLA-WLC, CCLA-CCLn, BSL1-BSL4, LBL1-LBL4may be etched back by mechanical etching or by chemical etching and/orchemical mechanical polishing (CMP) and the like. A polysilicon layermay be deposited thereon and polished using CMP. Anotherphotolithography or photomasking and etching step is performed to createthe bitlines BSL1-BSL4 and the current control lines CLA-CCLn. An oxidefilling or deposition step is performed to isolate the various bitlinesBSL1-BSL4 and the current control lines CLA-CCLn from each other.Contacts 271, 272 are then formed by etching and metallization.Additionally, known methods of doping, heat treating, diffusing,etching, layering, trenching, polishing and the like, may be utilized inthe fabrication process of the a NVM array 200 without departing fromthe present invention.

A NAND nitride trap memory array 200 in accordance with the preferredembodiments of the present invention is easily scalable due, at least inpart, to a field induced inversion source/drain which is used to replacethe implanted buried diffusion source/drain to improve over shortchannel effect and punch-through. A gate control low current source sidehot electron injection programming method is used in the preferredembodiments to reduce the programming current and increase theprogramming speed. A negative gate voltage FN erase method is used withthe preferred embodiments to increase the erasing speed and improve thedata retention.

From the foregoing, it can be seen that the present invention isdirected to a non-volatile memory semiconductor device having a two-bitsper cell NAND nitride trap memory and a method for manufacturing anon-volatile memory semiconductor device having a two-bits per cell NANDnitride trap memory. It will be appreciated by those skilled in the artthat changes could be made to the embodiments described above withoutdeparting from the broad inventive concept thereof. It is understood,therefore, that this invention is not limited to the particularembodiments disclosed, but it is intended to cover modifications withinthe spirit and scope of the present invention as defined by the appendedclaims.

1. A method of programming a non-volatile memory cell in a memory array,the memory array includes a semiconductor substrate, a firstsource/drain, a second source/drain, a well region between the firstsource/drain and the second source/drain, a plurality of memory cellsdisposed on the semiconductor substrate between the first source/drainand the second source/drain, a plurality of wordlines associated withrespective ones of the plurality of memory cells, a plurality of currentcontrol lines that are each disposed between adjacent pairs of theplurality of wordlines, each memory cell includes a first oxide layerabove the well region, a charge storage layer above the first oxidelayer and a second oxide layer above the charge storage layer, themethod comprising: applying a positive wordline programming voltage tothe wordline over the respective memory cell to be programmed; applyinga reference voltage to the well region; applying a current control lineprogramming voltage to a current control line closest to the memory cellto be programmed on the side nearest the second source/drain region; andapplying a source/drain programming voltage to the first source/drainregion and coupling the second source/drain region to the referencevoltage, the source/drain programming voltage being sufficient to causeelectron tunneling from the second source/drain region through the wellregion toward the charge storage layer to program a first bit.
 2. Themethod according to claim 1, further comprising: applying the currentcontrol line programming voltage to a current control line closest tothe memory cell to be programmed on the side nearest the firstsource/drain region; and applying the source/drain programming voltageto the second source/drain region and coupling the first source/drainregion to the reference voltage, the source/drain programming voltagebeing sufficient to cause electron tunneling from the first source/drainregion through the well region toward the charge storage layer toprogram a second bit.
 3. The method according to claim 1, wherein thewordline programming voltage is between about 8-12 volts direct current.4. The method according to claim 1, wherein the source/drain programmingvoltage is between about 4-6 volts direct current.
 5. The methodaccording to claim 1, wherein the current control line programmingvoltage is between about 0.7-2 volts direct current.